LF353N 【◆强势代理 ◆】【◆全新原装现货◆】

原厂料号：LF353N品牌：TI

LF353-N

SNOSBH3F –APRIL 1998–REVISED MARCH 2013 www.ti.com

DC Electrical acteristics

LF353-N

Symbol Parameter Conditions Units

MIn Typ Max

VOS Input Offset Voltage RS=10kΩ, TA=25°C 5 10 mV

Over Temperature 13 mV

ΔVOS/ΔT Average TC of Input Offset Voltage RS=10 kΩ 10 μV/°C

IOS Input Offset Current Tj=25°C

(1)(2) 25 100 pA

Tj≤70°C 4 nA

IB Input Bias Current Tj=25°C

(1)(2) 50 200 pA

Tj≤70°C 8 nA

RIN Input Resistance Tj=25°C 1012 Ω

AVOL Large Signal Voltage Gain VS=±15V, TA=25°C 25 100 V/mV

VO=±10V, RL=2 kΩ

Over Temperature 15 V/mV

VO Output Voltage Swing VS=±15V, RL=10kΩ ±12 ±13.5 V

VCM Input Common-Mode Voltage VS=±15V ±11 +15 V

Range 12 V

CMRR Common-Mode Rejection Ratio RS≤ 10kΩ 70 100 dB

PSRR Supply Voltage Rejection Ratio See(3) 70 100 dB

IS Supply Current 3.6 6.5 mA

(1) These specifications apply for VS=±15V0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.

(2) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,

Tj

. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation

the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the

thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.

(3) Supply voltage rejection ratio is measured for both supply magnitudes increasingdecreasing simultaneously in accordance with

• 芯片型号：

  LF353N

• 规格书：

  下载

• 企业简称：

  TI1【德州仪器】详情

• 厂商全称：

  Texas Instruments(TI)

• 中文名称：

  德州仪器 (TI)

• 内容页数：

  16 页

• 文件大小：

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• 资料说明：

  LF353 Wide Bandwidth Dual JFET Input Operational Amplifier